micropac industries, in c. optoelectronic products division ? ? ? www.micropac.com e - mail: optosales @ micropac.com 66312 1 5 kv high voltage, radiation tolerant isolator optoelectronic products division 07/ 30 /2009 features: ? designed to exceed mil - prf - 19500 radiation requirements ? 15 kvdc isolation ? current transfer ratio 15 0% typical ? base lead provided for conventional transistor biasing applications: ? high voltage isolation ? voltage level shifting ? grid current modulator ? switching power supplies ? medical systems description the 66312 high voltage isolator consisting of an 850nm led optically coupled to a photodiode detector driving a radiation tolerant transistor. this configuration has proven to be highly tolerant to both proton and total dose radiation. the isolato r is built with hermetic components internally optically coupled and encased in a high temperature outer pps plastic housing. absolute maximum ratings (t a =25c unless otherwise specified) isolation voltage (input to output) (note 2) ................................ ................................ ................................ ....................... 15 kvdc operating free - air temperature range ................................ ................................ ................................ .............. - 40 c to +100 c storage temperat ure ................................ ................................ ................................ ................................ ........... . - 40 c to +100 c lead solder temperature (10 second, 1.6mm from case) (note 1) ................................ ................................ .................... 260 c led: peak forward input current (2 ? s duration) ................................ ................................ ................................ ....................... 300 ma average forward input current ................................ ................................ ................................ ................................ ........... 50 ma reverse input voltage ................................ ................................ ................................ ................................ ........................... 3.0 v input power dissipation ................................ ................................ ................................ ................................ ................... 100 mw output transi stor: collector - base voltage ................................ ................................ ................................ ................................ ............................ 40 v collector - emitter voltage ................................ ................................ ................................ ................................ ........................ 40 v emitter - base voltage ................................ ................................ ................................ ................................ ................................ 4 v continuous collector current ................................ ................................ ................................ ................................ ............... 50 ma continuous transistor power dissipation ................................ ................................ ................................ ....................... 300 mw package dimensions schematic diagram all dimensions are in inches unless otherwise specified pin function 1 anode 2 cathode 3 collector 4 base 5 emitter 1.100 0.280 0.355 0.375 0.1250.020 1.0000.010 0.050 0.020 typ. pin 1 anode identifier 0.090 0.100 0.065 0.075 0.075 2 1 3 4 5 anode 1 cathode 2 3 collector 5 emitter 4 base 0.030 x 45 led end
micropac industries, in c. optoelectronic products division ? ? ? www.micropac.com e - mail: optosales @ micropac.com 66312 1 5 kv high voltage, radiation tolerant isolator 07/ 30 /2009 electrical characteristics ( t a = 25c unless otherwise specified) parameter symbol mi n typ max units test conditions note input led input forward voltage v f 1.3 1.8 v i f = 20 ma reverse current i r 100 a v r = 3.0 v output transistor collector - base breakdown voltage v (br)cbo 40 v i c = 100 a, i e = 0, i f = 0 collector - emitter b reakdown voltage v (br)ceo 40 v i c = 1 ma, i b = 0, i f = 0 emitter - base breakdown voltage v (br)ebo 4 v i c = 0, i e = 100 a, i f = 0 collector - emitter cutoff current i ceo 100 na v cc = 20 v, i f = 0 coupled characteristics current transfer ratio ct r 50 % v ce = 1 v, i f = 10 ma collector - emitter saturation voltage v ce(sat) 0.3 v i f = 20 ma, i c = 10 ma input C output isolation voltage v i - o 1 5 ,0 00 v i i - o = 25 ? a 2 rise time t r 20 s v cc = 10 v, i f = 10 ma, r l = 100 fall time t f 20 s v cc = 10 v, i f = 10 ma, r l = 100 notes: 1) the duration can be extended to 10 seconds maximum when flow soldering. otherwise 5 seconds with soldering iron. 2) device considered a two terminal device with all input pins (anode and cathode) shorted t ogether and all output pins (collector, emitter and base) shorted together. selection guide part # part description 66312 - 001 commercial 66312 - 101 screened
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